This paper presents a use case of emerging memristive kind oxide-based memory (OxRAM) device in active pixel sensor (APS) architecture. The proposed hybrid architecture exploits OxRAM's multiple non-volatile resistance states to achieve variable gain at pixel's column output and OxRAM's nonlinear dynamic capacitance property for overexposure correction at sensing-node. The exposure correction scheme under bright-light condition utilizes the OxRAM as a tunable capacitive load to obtain optimum charge-to-voltage (Q-V)
conversion-gain (CG). The hybrid-pixel architecture shows a ∼ 15 dB relative improvement in pixel dynamic-range (DR) for overexposure case. The implementation of variable-gain hybrid differential amplifier using OxRAM helps to optimize the input-referred noise and also DR at pixel's column output. The hybrid differential-amplifier simulations show multiple gain curves (varying from ∼ 17 dB to ∼ 32 dB) using OxRAM's multiple resistance states. The proposed hybrid-pixel architecture using emerging memristive technology, i.e, OxRAM, presents a proof-of-concept of pixel- level flexibility and reconfigurability for difficult-light conditions.