We wish to submit a research article entitled “Low Restoration-Energy Differential Spin Hall Effect MRAM for High-Speed Nonvolatile SRAM Application” for consideration by ISQED 2019.
In the manuscript, we present a differential spin Hall effect (DSHE) based nonvolatile static random access memory, named as DSNVM. DSNVM consist of a conventional 6T SRAM cell and a DSHE as nonvolatile element. The data present at storage nodes of SRAM are complementary to each other and are stored in DSHE memory counterpart. The stored data can be retrieved once power supply is resumed. The analysis of DSNVM cell is carried out and is compared with other spintronics based NVSRAMs. DSNVM shows 40% faster data restoration and 16.7% lesser energy consumption as compared to SHE based NVSRAM.
We believe that this manuscript is appropriate for publication because it is related to Electronic design under subsection Emerging Process & Device Technologies and Design Issues (EDT).